In Memoriam: October 2011

IEEE mourns the loss of the following members

21 October 2011
obit_strang Photo: The Harvard Press

Donald Strang

Microwave engineer

Life Senior Member, 83; died 21 June

Donald Strang helped develop microwave and radar technology.

He began his career in the 1940s as a second lieutenant in the U.S. Army Signal Corps. He then worked as an electrical engineer at Raytheon Corp., in Bedford, Mass., before joining Sanders Associates (now part of BAE Systems), a defense contractor in Nashua, N.H. He worked on the development of countermeasure systems and aerial-sonar submarine detection. He retired in 1988 after 35 years and became a consultant for BAE, as well as other defense contractors.

Strang received a bachelor’s degree in 1949 from Cornell University, in Ithaca, N.Y. He earned a master’s degree in electrical engineering in 1953 from Northeastern University, in Boston.

obit_khan Photo: Baha'i International Community

Peter J. Khan

Electrical engineering professor

Life Member, 74; died 14 July

Peter J. Khan taught electrical engineering at three universities.

He became a Fulbright postdoctoral fellow in 1963 at the University of Michigan, in Ann Arbor and in 1967, he became a professor of electrical engineering there. In 1975 he moved to Australia and was a visiting professor for a year at the University of New South Wales, in Sydney. He then joined the University of Queensland, in Brisbane, as an associate professor.

He was on the editorial board of IEEE Transactions on Microwave Theory and Techniques.

Khan received two bachelor’s degrees, including one in engineering, and a doctorate, all from the University of Sydney.

obit_moll Photo: Agilent Technologies

Nick Moll

Pioneer in semiconductor research

Life Fellow, 64; died 6 August

Nick Moll’s research in semiconductors led to the development of one of the fastest transistors in the world.

In 1970 Moll joined the technical staff at Hewlett Packard Labs (now Agilent Labs) in Palo Alto, Calif., where he eventually became a project manager. There, he helped develop a gallium arsenide heterojunction bipolar transistor, which is used in ultrafast circuits, radio-frequency systems, and applications requiring high power efficiency, such as RF power amplifiers in cellphones. In 2002 he was named an Agilent Fellow, the company’s highest honor. He retired in 2006.

He was editor of IEEE Transactions on Electron Devices from 1990 to 1996.

Moll received bachelor’s, master’s, and doctoral degrees, all in electrical engineering, from Stanford University.

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